Richardson Electronics, Ltd. Strengthens Power Management Portfolio with Pakal Technologies Global Technology Partner Agreement
Richardson Electronics (NASDAQ: RELL) has announced a global technology partner agreement with Pakal Technologies to distribute their groundbreaking 650V and 1200V IGTO(t) silicon power semiconductor solutions. The IGTO(t) (Insulated Gate Turn-Off Thyristor) is the first new high-voltage silicon power semiconductor in 40 years, offering up to 30% lower conduction losses compared to modern IGBTs.
The technology serves as a direct drop-in upgrade for modern IGBTs, targeting applications in electric vehicles, renewable energy systems, welding, solar, robotics, and industrial power conversion. Pakal has already begun commercial shipments of both voltage variants in various current and package formats.
Richardson Electronics (NASDAQ: RELL) ha annunciato un accordo globale di partnership tecnologica con Pakal Technologies per la distribuzione delle loro innovative soluzioni in semiconduttori di potenza in silicio IGTO(t) da 650V e 1200V. L'IGTO(t) (Thyristor ad Accensione tramite Gate Isolato) rappresenta il primo nuovo semiconduttore di potenza in silicio ad alta tensione degli ultimi 40 anni, offrendo fino a un 30% di perdite di conduzione inferiori rispetto agli IGBT moderni.
Questa tecnologia 猫 un aggiornamento diretto e compatibile per gli IGBT attuali, destinata ad applicazioni in veicoli elettrici, sistemi di energie rinnovabili, saldatura, solare, robotica e conversione industriale di potenza. Pakal ha gi脿 avviato le spedizioni commerciali di entrambe le varianti di tensione in diversi formati di corrente e package.
Richardson Electronics (NASDAQ: RELL) ha anunciado un acuerdo global de asociaci贸n tecnol贸gica con Pakal Technologies para distribuir sus innovadoras soluciones de semiconductores de potencia de silicio IGTO(t) de 650V y 1200V. El IGTO(t) (Tiristor de Encendido por Puerta Aislada) es el primer semiconductor de potencia de silicio de alta tensi贸n nuevo en 40 a帽os, ofreciendo hasta un 30% menos p茅rdidas de conducci贸n en comparaci贸n con los IGBT modernos.
Esta tecnolog铆a funciona como una mejora directa y compatible para los IGBT actuales, enfoc谩ndose en aplicaciones en veh铆culos el茅ctricos, sistemas de energ铆a renovable, soldadura, solar, rob贸tica y conversi贸n industrial de potencia. Pakal ya ha comenzado los env铆os comerciales de ambas variantes de voltaje en diversos formatos de corriente y empaquetado.
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鞚� 旮办垹鞚� 斓滌嫚 IGBT鞚� 歆侅爲 雽�觳� 鞐呹犯霠堨澊霌滊靹� 鞝勱赴彀�, 鞛儩 鞐愲剤歆� 鞁滌姢韰�, 鞖╈爲, 韮滌枒甏�, 搿滊磭瓿淀暀, 靷办梾鞖� 鞝勲牓 氤�頇� 霌膘潣 鞚戩毄 攵勳暭毳� 氇╉憸搿� 頃╇媹雼�. Pakal鞚� 鞚措 雼れ枒頃� 鞝勲 氚� 韺偆歆� 順曥嫕鞚� 霊� 鞝勳晻 氩勳爠鞐� 雽�頃� 靸侅梾鞝� 於滍晿毳� 鞁滌瀾頄堨姷雼堧嫟.
Richardson Electronics (NASDAQ : RELL) a annonc茅 un accord mondial de partenariat technologique avec Pakal Technologies pour distribuer leurs solutions r茅volutionnaires de semi-conducteurs de puissance en silicium IGTO(t) de 650V et 1200V. L'IGTO(t) (Thyristor 脿 grille isol茅e) est le premier nouveau semi-conducteur de puissance haute tension en silicium depuis 40 ans, offrant jusqu'脿 30 % de pertes de conduction en moins par rapport aux IGBT modernes.
Cette technologie constitue une mise 脿 niveau directe et compatible des IGBT modernes, ciblant des applications dans les v茅hicules 茅lectriques, syst猫mes d鈥櫭﹏ergies renouvelables, soudage, solaire, robotique et conversion industrielle de puissance. Pakal a d茅j脿 commenc茅 les exp茅ditions commerciales des deux variantes de tension dans divers formats de courant et de bo卯tier.
Richardson Electronics (NASDAQ: RELL) hat eine globale Technologiepartnerschaft mit Pakal Technologies angek眉ndigt, um ihre bahnbrechenden 650V- und 1200V-IGTO(t)-Silizium-Leistungshalbleiterl枚sungen zu vertreiben. Der IGTO(t) (Isoliert-gesteuerter Thyristor) ist der erste neue Hochvolt-Silizium-Leistungshalbleiter seit 40 Jahren und bietet bis zu 30 % geringere Leitungsverluste im Vergleich zu modernen IGBTs.
Die Technologie dient als direkter, kompatibler Ersatz f眉r moderne IGBTs und richtet sich an Anwendungen in Elektrofahrzeugen, erneuerbaren Energiesystemen, Schwei脽technik, Solar, Robotik und industrieller Leistungsumwandlung. Pakal hat bereits mit der kommerziellen Auslieferung beider Spannungsvarianten in verschiedenen Strom- und Geh盲useformaten begonnen.
- First major innovation in high-voltage silicon power semiconductors in 40 years
- Up to 30% lower conduction losses compared to modern IGBTs
- Direct drop-in replacement capability for existing IGBT applications
- Commercial shipments already underway for both 650V and 1200V products
- None.
Insights
RELL partners with Pakal to distribute revolutionary silicon power switches offering 30% efficiency gains across EV and renewable energy markets.
Richardson Electronics' new partnership with Pakal Technologies represents a significant technological advancement in the power semiconductor space. The agreement centers around Pakal's groundbreaking IGTO(t) - Insulated Gate Turn-Off Thyristor technology, which is noteworthy for being the first new high-voltage silicon power semiconductor developed in 40 years since the introduction of IGBTs.
The technical specifications reveal compelling advantages: these components deliver up to
What makes this technology particularly disruptive is its implementation as a direct drop-in replacement for existing IGBTs while maintaining cost-effective silicon pricing. This dramatically lowers adoption barriers for manufacturers across multiple industries, eliminating the need for expensive redesigns.
The market applications span several high-growth sectors including electric vehicles, renewable energy systems, welding equipment, solar inverters, robotics, and industrial power conversion. This diversification across multiple electrification-driven industries provides significant market opportunity.
The announcement that commercial shipments of both 650V and 1200V IGTO(t) products are already underway indicates product maturity and readiness for market integration. For Richardson Electronics, this partnership strengthens their power management portfolio with genuinely innovative technology that addresses efficiency challenges in rapidly growing markets where thermal management and power loss are critical constraints.
Pakal Technologies, a Silicon Innovator Delivering 650 Volts and 1200 Volts IGTO(t)
LAFOX, Ill., July 09, 2025 (GLOBE NEWSWIRE) -- (狈础厂顿础蚕:鈥�RELL) today announced a global technology partner agreement with Pakal Technologies, Inc., a cutting-edge innovator in silicon power semiconductor solutions. Under this agreement, Richardson Electronics will partner with Pakal to supply customers with Pakal鈥檚 advanced 650V and 1200V silicon-based power switches鈥攄elivering breakthrough efficiency to customers worldwide.
Pakal Technologies has developed the groundbreaking IGTO(t) - Insulated Gate Turn-Off Thyristor structure. This is the first new high-voltage silicon power semiconductor to be released since the IGBT was introduced 40 years ago. The IGTO(t) is a direct drop-in upgrade for modern IGBTs. Pakal Technologies鈥� IGTO(t) offers up to
鈥淩ichardson Electronics is the ideal technology partner to help bring our transformative technology to market,鈥� said Ben鈥疩ui帽ones, CEO of Pakal Technologies. 鈥淭heir global reach and experience launching high-performance power products makes them a powerful ally as we drive the future of electrification.鈥�
鈥淲e are proud to welcome Pakal Technologies to our portfolio of technology partners,鈥� said Greg Peloquin, Executive Vice President and General Manager of and groups. 鈥淭heir latest product innovation represents a significant advancement and will play a critical role in delivering power conversion solutions that address a pressing need in the market.鈥�
Pakal鈥檚 initial commercial shipments are underway for its 650 V and 1200V IGTO(t) in various current and package formats. For more information or to speak with a member of the Richardson Electronics team, please today.
About Richardson Electronics, Ltd.
Richardson Electronics, Ltd. is a leading global manufacturer of engineered solutions, green energy products, power grid and microwave tubes and related consumables; power conversion and RF and microwave components; CT X-ray tubes; and customized display solutions. More than
Richardson Electronics, Ltd. common stock trades on the NASDAQ Global Select Market under the ticker symbol RELL.
About Richardson Electronics 鈥� Power & Microwave Technologies
For over 75 years, Richardson Electronics has been your industry-leading global provider of engineered solutions, RF & microwave, and power products. The Power & Microwave Technologies group continues this legacy and complements it with new products from the world's most innovative technology partners. Richardson Electronics' Power & Microwave Technologies group focuses on what we do best: identify and design disruptive technologies, introduce new products on a global basis, develop solutions for our customers, and provide exceptional worldwide support. As a global company, we provide solutions and add value through design-in support, systems integration, prototype design and manufacturing, testing, logistics, and aftermarket technical service and repair鈥攁ll through our existing global infrastructure. More information is available at | | .
About Pakal Technologies
Pakal Technologies is a pioneering power semiconductor company redefining silicon switch performance with its proprietary IGTO(t) architecture. Offering ultra-low switching losses, high reliability, and cost advantages, Pakal鈥檚 platform supports next-generation electrification in automotive, industrial, renewable energy, and grid applications. Headquartered in San Francisco, CA. Visit for more information.
| For Details Contact: Chris Marshall CTO/VP of Marketing Power & Microwave Technologies Phone: (630) 208-2222 [email protected] | 40W267 Keslinger Road LaFox, IL 60147-0393 USA (630) 208-2200 | Fax: (630) 208-2550 |
FAQ
What is the significance of RELL's partnership with Pakal Technologies?
What voltage ratings are available for Pakal's IGTO(t) products through RELL?
What markets will benefit from RELL's distribution of IGTO(t) technology?
How does the Pakal IGTO(t) technology compare to existing IGBT solutions?
