SK hynix Completes World's First HBM4 Development and Readies Mass Production
SK hynix (OTC:HXSCL) has achieved a significant milestone by completing the world's first development of HBM4 (High Bandwidth Memory) and preparing for mass production. The next-generation memory product for AI applications demonstrates remarkable improvements over its predecessor, featuring doubled bandwidth through 2,048 I/O terminals and 40% better power efficiency.
The company has exceeded JEDEC standards by implementing over 10Gbps operating speed, compared to the standard 8Gbps. SK hynix expects the HBM4 implementation to improve AI service performance by up to 69%, significantly reducing data center power costs. The product utilizes Advanced MR-MUF process and 1bnm technology to ensure reliable mass production.
[ "First company globally to complete HBM4 development and prepare for mass production", "Doubled bandwidth and 40% improved power efficiency compared to previous generation", "Expected to improve AI service performance by up to 69%", "Exceeds JEDEC standard operating speed (10Gbps vs 8Gbps standard)" ]SK hynix (OTC:HXSCL) ha raggiunto una pietra miliare completando lo sviluppo mondiale del HBM4 (High Bandwidth Memory) e preparando la produzione di massa. Il prodotto di memoria di prossima generazione per applicazioni AI mostra notevoli miglioramenti rispetto al suo predecessore, con larghezza di banda raddoppiata grazie a 2.048 terminali I/O e un'efficienza energetica migliore del 40%.
La companyia ha superato gli standard JEDEC implementando oltre 10 Gbps di velocità operativa, rispetto agli 8 Gbps standard. SK hynix si aspetta che l'implementazione di HBM4 migliorerà le prestazioni dei servizi AI fino al 69%, riducendo notevolmente i costi energetici dei data center. Il prodotto utilizza il processo Advanced MR-MUF e la tecnologia 1 nm per garantire una produzione di massa affidabile.
SK hynix (OTC:HXSCL) ha alcanzado un hito significativo al completar el primer desarrollo mundial de HBM4 (memoria de gran ancho de banda) y prepararse para la producción en masa. El producto de memoria de próxima generación para aplicaciones de IA demuestra mejoras notables respecto a su predecesor, con ancho de banda duplicado gracias a 2.048 terminales I/O y un 40% más de eficiencia energética.
La compa?ía ha superado los estándares JEDEC al implementar una velocidad de operación superior a 10 Gbps, frente al estándar de 8 Gbps. SK hynix espera que la implementación de HBM4 mejore el rendimiento de los servicios de IA hasta en un 69%, reduciendo significativamente los costos de energía de los data centers. El producto utiliza el proceso Advanced MR-MUF y la tecnología de 1 nm para garantizar una producción en masa confiable.
SK hynix (OTC:HXSCL)? ?? ??? HBM4 ??? ??? ??? ?? ??? ?? ??? ???? ??????. AI ??????? ??? ??? ??? ?? ??? ?? ??? ???? ????, ??? ? ? ??? 2,048?? I/O ???, ?? ??? 40% ??? ???? ???.
??? JEDEC ??? ???? 10Gbps ?? ?? ??? ?????, ?? 8Gbps? ?? ?????. SK hynix? HBM4 ??? AI ??? ??? ?? 69%?? ???? ??? ????, ??? ??? ?? ??? ?? ?? ??? ????. ? ??? ?? ??? ???? ???? ?? Advanced MR-MUF ??? 1nm ??? ?????.
SK hynix (OTC:HXSCL) a atteint une étape importante en complétant le premier développement mondial du HBM4 (High Bandwidth Memory) et en se préparant à la production de masse. Le produit mémoire de prochaine génération pour les applications IA montre des améliorations remarquables par rapport à son prédécesseur, avec un doublement de la bande passante gr?ce à 2 048 terminaux I/O et une efficacité énergétique 40 % supérieure.
L'entreprise a dépassé les normes JEDEC en implémentant une vitesse de fonctionnement supérieure à 10 Gbps, par rapport à la norme de 8 Gbps. SK hynix anticipe que la mise en ?uvre de HBM4 améliorera les performances des services IA jusqu'à 69 %, réduisant considérablement les co?ts énergétiques des data centers. Le produit utilise le procédé Advanced MR-MUF et la technologie 1 nm pour assurer une production de masse fiable.
SK hynix (OTC:HXSCL) hat einen bedeutenden Meilenstein erreicht, indem es als weltweit erstes Unternehmen die Entwicklung von HBM4 (High Bandwidth Memory) abgeschlossen und sich auf die Massenproduktion vorbereitet hat. Das n?chste Speicherprodukt für KI-Anwendungen zeigt bemerkenswerte Verbesserungen gegenüber dem Vorg?nger, mit verdoppelter Bandbreite durch 2.048 I/O-Terminals und 40% besserer Energieeffizienz.
Das Unternehmen hat JEDEC-Standards übertroffen, indem es eine Betriebs Geschwindigkeit von über 10 Gbps implementierte, im Vergleich zu 8 Gbps Standard. SK hynix erwartet, dass die Implementierung von HBM4 die Leistung von KI-Diensten um bis zu 69% verbessert und damit die Stromkosten von Rechenzentren deutlich senkt. Das Produkt nutzt das Advanced MR-MUF-Verfahren und die 1-nm-Technologie, um eine zuverl?ssige Massenproduktion sicherzustellen.
SK hynix (OTC:HXSCL) ???? ?????? ????? ???????? ??? ????? ????? ?? HBM4 (??????? ????? ?????? ???????) ?????????? ??????? ?????. ?????? ????? ????? ?????? ???????? ?????? ????????? ???? ?????? ?????? ??????? ??????? ?? ?????? ??? ?????? ??????? ??? 2,048 ??? I/O ? ????? ????? ???? ????? 40%.
?????? ?????? ?????? JEDEC ?? ???? ????? ???? ????? ?????? 10Gbps ????? ??????? 8Gbps. ????? SK hynix ?? ???? ????? HBM4 ??? ????? ???? ????? AI ??? ??? ??? 69%? ?? ????? ???? ??????? ?????? ?????? ????????. ?????? ?????? ????? MR-MUF ???????? ?????? 1nm ????? ????? ??? ?????.
SK hynix (OTC:HXSCL) 已完成全球首个 HBM4 的开发并为量产做好准备，标志着一个重要里程碑。面向 AI 应用的下一代内存产物相对于前代在多方面实现显著提升，具有带宽翻倍、通过 2,048 个 I/O 端口以及 功耗提升 40%的特性。
该公司通过实现 超过 10Gbps 的工作速度，超出 JEDEC 标准的 8Gbps。SK hynix 预计 HBM4 的实施将把 AI 服务性能提升高达 69%，大幅降低数据中心的电力成本。该产物采用 Advanced MR-MUF 工艺与 1nm 技术，确保大量生产的可靠性。
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-????????? The company is ready to supply the best-in-class HBM4 to customers according to their plans and to maintain competitive position
-????????? The product's bandwidth has doubled and power efficiency has improved
-????????? Company to overcome the technological challenges of the AI era with HBM4, a symbolic turning point beyond AI infrastructure limitations
* HBM(High Bandwidth Memory): This high-value, high-performance memory vertically interconnects multiple DRAM chips and dramatically increases data processing speed in comparison to conventional DRAM products. There are six generations of HBM, starting with the original HBM which was followed by HBM2, HBM2E, HBM3, HBM3E, and HBM4. |
SK hynix said that the company has successfully completed development and based on this technological achievement, the company has prepared HBM4 mass production to lead the AI era. Through this momentum, the company has once again proven the AI memory leadership in the global market.
"Completion of HBM4 development will be a new milestone for the industry," Joohwan Cho, Head of HBM Development at SK hynix, who has led the development, said. "By supplying the product that meets customer needs in performance, power efficiency and reliability in timely manner, the company will fulfill time to market and maintain competitive position."
With recent dramatic increase in AI demand and data processing, the needs for high bandwidth* memory for faster system speed are surging. In addition, securing memory power efficiency has emerged as a key requirement for customers as power consumption for data center operation has increased. SK hynix expects HBM4, with increased bandwidth and power efficiency, to be the optimal solution to meet customers' needs.
* Bandwidth: In HBM products, bandwidth refers to the total data capacity that one HBM package can process per second. |
HBM4, of which mass production system has been readied, has the industry's best data processing speed and power efficiency with the bandwidth doubled through adoption of 2,048 I/O terminals, double from the previous generation, and power efficiency improved by more than
The company has far exceeded the JEDEC* standard operating speed(8Gbps) by implementing over 10Gbps(Gigabit per second) operating speed in HBM4.
* JEDEC(Joint Electron Device Engineering Council): A standardization body that is the global leader in developing open standards and publications for the microelectronics industry. |
In addition, the company adopted the Advanced MR-MUF* process in HBM4, which has been proven to be reliable in the market, and the 1bnm process, or the fifth-generation of the 10-nanometer technology, to minimize the risk in mass production.
* MR-MUF(Mass Reflow Molded Underfill): The process of stacking semiconductor chips, injecting liquid protective materials between them to protect the circuit between chips, and hardening them. The process has proved to be more efficient and effective for heat dissipation, compared with the method of laying film-type materials for each chip stack. SK hynix's advanced MR-MUF technology is critical to securing a stable HBM mass production as it provides good warpage control and reduces the pressure on the chips being stacked. |
"We are unveiling the establishment of the world's first mass production system of HBM4," Justin Kim, President & Head of AI Infra at SK hynix, said. "HBM4, a symbolic turning point beyond the AI infrastructure limitations, will be a core product for overcoming technological challenges." "We will grow into a full-stack AI memory provider by supplying memory products with the best quality and diverse performance required for the AI era in a timely manner."
About SK hynix Inc.
SK hynix Inc., headquartered in
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