Navitas Announces Plans for 200mm GaN Production with PSMC
Navitas Semiconductor (Nasdaq: NVTS) has announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC) to initiate production and continue development of 200mm GaN-on-silicon technology. The production will take place at Powerchip's Fab 8B facility in Zhunan Science Park, Taiwan, utilizing an improved 180nm CMOS process.
The partnership will manufacture Navitas' GaN portfolio with voltage ratings from 100V to 650V, targeting growing demand in 48V infrastructure, AI data centers, and EVs. Initial device qualification is expected in Q4 2025, with 100V family production starting in 1H26. The 650V devices will transition from TSMC to Powerchip over the next 12-24 months.
This collaboration follows Navitas' recent partnerships with NVIDIA for 800V HVDC architectures, Enphase for next-generation IQ9 with GaNFast ICs, and Changan Automobile for GaN-based on-board chargers.
[ "Partnership enables improved manufacturing capabilities with advanced 180nm CMOS process", "Expected improvements in performance, power efficiency, integration, and cost", "Expansion of production capacity through additional manufacturing partner", "Strategic positioning for growing markets including AI data centers, EVs, and solar", "Recent partnerships secured with major companies (NVIDIA, Enphase, Changan)" ]Navitas Semiconductor (Nasdaq: NVTS) ha annunciato una partnership strategica con Powerchip Semiconductor Manufacturing Corporation (PSMC) per avviare la produzione e continuare lo sviluppo della tecnologia GaN-on-silicon su wafer da 200mm. La produzione avverr脿 presso lo stabilimento Fab 8B di Powerchip nel Zhunan Science Park, Taiwan, utilizzando un processo CMOS migliorato a 180nm.
La collaborazione produrr脿 il portafoglio GaN di Navitas con tensioni da 100V a 650V, puntando alla crescente domanda nelle infrastrutture a 48V, nei data center AI e nei veicoli elettrici. La qualificazione iniziale dei dispositivi 猫 prevista per il Q4 2025, con la produzione della famiglia a 100V che inizier脿 nel primo semestre 2026. I dispositivi a 650V saranno trasferiti da TSMC a Powerchip nei prossimi 12-24 mesi.
Questa collaborazione segue le recenti partnership di Navitas con NVIDIA per architetture HVDC a 800V, Enphase per la prossima generazione IQ9 con IC GaNFast, e Changan Automobile per caricabatterie a bordo basati su GaN.
- La partnership consente capacit脿 produttive migliorate grazie al processo CMOS avanzato a 180nm
- Si prevedono miglioramenti in prestazioni, efficienza energetica, integrazione e costi
- Espansione della capacit脿 produttiva tramite un ulteriore partner manifatturiero
- Posizionamento strategico per mercati in crescita come data center AI, veicoli elettrici e solare
- Partnership recenti assicurate con importanti aziende (NVIDIA, Enphase, Changan)
Navitas Semiconductor (Nasdaq: NVTS) ha anunciado una alianza estrat茅gica con Powerchip Semiconductor Manufacturing Corporation (PSMC) para iniciar la producci贸n y continuar el desarrollo de la tecnolog铆a GaN sobre silicio de 200mm. La producci贸n se realizar谩 en la planta Fab 8B de Powerchip en el Zhunan Science Park, Taiw谩n, utilizando un proceso CMOS mejorado de 180nm.
La asociaci贸n fabricar谩 el portafolio GaN de Navitas con voltajes desde 100V hasta 650V, apuntando a la creciente demanda en infraestructura de 48V, centros de datos AI y veh铆culos el茅ctricos. La calificaci贸n inicial de dispositivos se espera para el Q4 2025, con producci贸n de la familia de 100V comenzando en el primer semestre de 2026. Los dispositivos de 650V se transferir谩n de TSMC a Powerchip en los pr贸ximos 12-24 meses.
Esta colaboraci贸n sigue a las recientes alianzas de Navitas con NVIDIA para arquitecturas HVDC de 800V, Enphase para la pr贸xima generaci贸n IQ9 con ICs GaNFast, y Changan Automobile para cargadores a bordo basados en GaN.
- La alianza permite capacidades de fabricaci贸n mejoradas con un avanzado proceso CMOS de 180nm
- Se esperan mejoras en rendimiento, eficiencia energ茅tica, integraci贸n y costos
- Expansi贸n de la capacidad de producci贸n mediante un socio adicional de manufactura
- Posicionamiento estrat茅gico para mercados en crecimiento como centros de datos AI, veh铆culos el茅ctricos y solar
- Alianzas recientes aseguradas con importantes compa帽铆as (NVIDIA, Enphase, Changan)
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- 靹彪姤, 鞝勲牓 須湪, 韱淀暕靹� 氚� 牍勳毄 旄‰┐鞐愳劀 臧滌劆 旮半寑
- 於旉皜 鞝滌“ 韺岉姼雱堧ゼ 韱淀暅 靸濎偘 電ル牓 頇曥灔
- AI 雿办澊韯� 靹柬劙, 鞝勱赴彀�, 韮滌枒甏� 霌� 靹膘灔 鞁滌灔鞐� 雽�頃� 鞝勲灥鞝� 韽靺旊嫕
- 欤检殧 旮办梾(NVIDIA, Enphase, Changan)瓿检潣 斓滉芳 韺岉姼雱堨嫮 頇曤炒
Navitas Semiconductor (Nasdaq : NVTS) a annonc茅 un partenariat strat茅gique avec Powerchip Semiconductor Manufacturing Corporation (PSMC) pour lancer la production et poursuivre le d茅veloppement de la technologie GaN sur silicium de 200 mm. La production aura lieu dans l'usine Fab 8B de Powerchip au Zhunan Science Park, 脿 Ta茂wan, en utilisant un proc茅d茅 CMOS am茅lior茅 de 180 nm.
Le partenariat fabriquera le portefeuille GaN de Navitas avec des tensions allant de 100V 脿 650V, ciblant la demande croissante dans les infrastructures 48V, les centres de donn茅es IA et les v茅hicules 茅lectriques. La qualification initiale des dispositifs est pr茅vue pour le 4e trimestre 2025, avec une production de la famille 100V d茅butant au 1er semestre 2026. Les dispositifs 650V seront transf茅r茅s de TSMC 脿 Powerchip au cours des 12 脿 24 prochains mois.
Cette collaboration fait suite aux partenariats r茅cents de Navitas avec NVIDIA pour des architectures HVDC 800V, Enphase pour la prochaine g茅n茅ration IQ9 avec des circuits int茅gr茅s GaNFast et Changan Automobile pour des chargeurs embarqu茅s 脿 base de GaN.
- Le partenariat permet d'am茅liorer les capacit茅s de fabrication gr芒ce au proc茅d茅 CMOS avanc茅 de 180 nm
- Am茅liorations attendues en performance, efficacit茅 茅nerg茅tique, int茅gration et co没ts
- Extension de la capacit茅 de production via un partenaire de fabrication suppl茅mentaire
- Positionnement strat茅gique pour des march茅s en croissance tels que les centres de donn茅es IA, les v茅hicules 茅lectriques et le solaire
- Partenariats r茅cents conclus avec des grandes entreprises (NVIDIA, Enphase, Changan)
Navitas Semiconductor (Nasdaq: NVTS) hat eine strategische Partnerschaft mit Powerchip Semiconductor Manufacturing Corporation (PSMC) angek眉ndigt, um die Produktion zu starten und die Entwicklung der 200mm GaN-on-Silizium-Technologie fortzusetzen. Die Produktion findet in Powerchips Fab 8B-Anlage im Zhunan Science Park, Taiwan, unter Verwendung eines verbesserten 180nm CMOS-Prozesses statt.
Die Partnerschaft wird Navitas' GaN-Portfolio mit Spannungswerten von 100V bis 650V herstellen und zielt auf die wachsende Nachfrage in 48V-Infrastrukturen, KI-Rechenzentren und Elektrofahrzeugen ab. Die erste Ger盲tequalifikation wird f眉r das 4. Quartal 2025 erwartet, die Produktion der 100V-Familie beginnt im ersten Halbjahr 2026. Die 650V-Ger盲te werden in den n盲chsten 12-24 Monaten von TSMC zu Powerchip verlagert.
Diese Zusammenarbeit folgt auf Navitas' j眉ngste Partnerschaften mit NVIDIA f眉r 800V HVDC-Architekturen, Enphase f眉r die n盲chste Generation IQ9 mit GaNFast-ICs und Changan Automobile f眉r GaN-basierte On-Board-Ladeger盲te.
- Partnerschaft erm枚glicht verbesserte Fertigungskapazit盲ten mit fortschrittlichem 180nm CMOS-Prozess
- Erwartete Verbesserungen bei Leistung, Energieeffizienz, Integration und Kosten
- Erweiterung der Produktionskapazit盲t durch zus盲tzlichen Fertigungspartner
- Strategische Positionierung f眉r wachsende M盲rkte wie KI-Rechenzentren, Elektrofahrzeuge und Solarenergie
- J眉ngste Partnerschaften mit gro脽en Unternehmen (NVIDIA, Enphase, Changan)
- None.
- Extended transition period of 12-24 months for 650V devices from TSMC to Powerchip
- Production start delayed until 1H26 for initial 100V family
- Qualification process still pending completion (expected Q4 2025)
Insights
Navitas' partnership with Powerchip for 200mm GaN production strengthens supply chain while potentially reducing costs and improving performance for AI/EV applications.
This strategic partnership represents a significant advancement in Navitas' manufacturing capabilities. Moving to 200mm GaN-on-silicon production with Powerchip's 180nm CMOS process provides multiple technical advantages over current methods. The larger wafer size compared to standard 150mm wafers increases production efficiency by approximately 78% in terms of usable area, while the improved process node enables smaller feature sizes that enhance performance metrics.
The phased transition plan is technically sound - starting with 100V devices in 1H26 before migrating the more complex 650V portfolio from TSMC over 12-24 months minimizes supply disruption risks. The Zhunan fab's established GaN manufacturing experience since 2019 reduces technical execution risk compared to building new capacity.
Most importantly, this addresses two critical industry challenges: supply chain diversification and cost efficiency. GaN technology's adoption in power-intensive applications like AI data centers (where power density is critical) and EVs (where efficiency directly impacts range) has been hampered by cost and supply constraints. Powerchip's advanced manufacturing processes should enable better yields, more dies per wafer, and ultimately lower per-unit costs - potentially accelerating GaN adoption in these high-growth markets.
The manufacturing qualification timeline (Q4 2025) aligns with market projections showing significant power semiconductor demand growth in 2026-2027, particularly for AI infrastructure and electric vehicles. This positions Navitas to capitalize on these trends with improved manufacturing capacity and cost structure.
Next-phase strategy expected to strengthen supply chain, drive innovation, and improve cost efficiency鈥攕upporting GaN鈥檚 ramp into AI data centers, EVs, solar, and home appliances.
TORRANCE, Calif., July 01, 2025 (GLOBE NEWSWIRE) -- (Nasdaq: NVTS), the industry leader in next-generation GaNFast鈩� gallium nitride (GaN) and GeneSiC鈩� silicon carbide (SiC) power semiconductors, today announced a strategic partnership with (PSMC or Powerchip), to start production and continue development of best-in-class 200mm GaN-on-silicon technology.
Navitas' GaN IC portfolio is expected to use Powerchip鈥檚 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has been operational since 2019 and supports various high-volume manufacturing processes for GaN, ranging from micro-LEDs to RF GaN devices.
Powerchip鈥檚 capabilities include an improved 180nm CMOS process, offering smaller and more advanced geometries, which bring improvements in performance, power efficiency, integration, and cost. 鈥�200mm GaN-on-silicon production on a 180nm process node enables us to continue innovating higher power density, faster, and more efficient devices while simultaneously improving cost, scale, and manufacturing yields鈥�, said Dr. Sid Sundaresan, SVP of WBG Technology Platforms at Navitas.
Powerchip is expected to manufacture Navitas鈥� GaN portfolio with voltage ratings from 100V to 650V, supporting the growing demand for GaN for 48V infrastructure, including hyper-scale AI data centers and EVs. Qualification of initial devices is expected in Q4 2025. The 100V family is expected to start production first at Powerchip in 1H26, while the company expects 650V devices will transition from Navitas鈥� existing supplier, TSMC, to Powerchip over the next 12-24 months.
Navitas recently made several announcements in the AI data center, EV, and solar markets, including its collaboration with technologies for 800V HVDC architectures for 1 MW IT racks and beyond. announced that its next-generation IQ9 would include Navitas鈥� , and announced its first commercial GaN-based OBC (on-board charger) using Navitas' technology.
鈥淲e are proud to partner with Powerchip to advance high-volume 200鈥痬m GaN-on-silicon production and look forward to driving continued innovation together in the years ahead鈥�, said Gene Sheridan, CEO and co-founder of Navitas. 鈥淭hrough our partnership with Powerchip, we are well-positioned to drive sustained progress in product performance, technological evolution, and cost efficiency.鈥�
"Powerchip has collaborated with Navitas on GaN-on-Si technology for years, and we're thrilled to announce that product qualification is nearly complete - bringing us to the verge of mass production鈥�, said Martin Chu, President at Powerchip. 鈥淏uilding on this strong partnership, Powerchip is committed to expanding our cooperation and continuously supporting Navitas in exploring and growing the GaN market.鈥�
About Powerchip Semiconductor Manufacturing Corporation
Powerchip Semiconductor Manufacturing Corporation (PSMC) is聽a Taiwanese semiconductor foundry that develops, manufactures, and distributes advanced memory components and other integrated circuits.聽Founded in 1994, PSMC operates multiple 12-inch and 8-inch wafer fabs, offering foundry services, design, manufacturing, and testing services.聽They are recognized for their expertise in developing and manufacturing a range of semiconductor products, including power integrated circuits, discrete components, and image sensors.聽
About Navitas
听(狈补蝉诲补辩: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating聽聽of power innovation, founded in 2014.聽聽integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary聽聽devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance / industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry鈥檚 first and only聽. Navitas was the world鈥檚 first semiconductor company to be聽.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Forward-Looking Statements
Statements and information in this press release that are not historical are forward-looking statements within the meaning of the Private Securities Litigation Reform Act of 1995 and are made pursuant to the 鈥渟afe harbor鈥� provisions of such Act. Forward-looking statements may be identified by the use of words such as 鈥渨e expect鈥� or 鈥渁re expected to be,鈥� 鈥渆stimate,鈥� 鈥減lan,鈥� 鈥減roject,鈥� 鈥渇orecast,鈥� 鈥渋ntend,鈥� 鈥渁nticipate,鈥� 鈥渂elieve,鈥� 鈥渟eek,鈥� or other similar expressions that predict or indicate future events or trends or that are not statements of historical matters. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations.
The risks, uncertainties, assumptions and other factors that could cause actual events or results to differ from the events or results predicted or implied by our forward-looking statement include those risk factors discussed in our filings with the SEC, including those disclosed under the caption 鈥淩isk Factors鈥� in our annual report on Form 10-K for the year ended December 31, 2024, our quarterly report on Form 10-Q for the quarter ended March 31, 2025 and subsequent quarterly reports. Navitas may elect to update these forward-looking statements at some point in the future, but specifically disclaims any obligation to do so.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
A photo accompanying this announcement is available at
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